ISSN:1003-8620

CN:42-1243/TF

主管:中信泰富特钢集团股份有限公司

主办:大冶特殊钢有限公司

特殊钢 ›› 2016, Vol. 37 ›› Issue (4): 58-60.

• 组织和性能 • 上一篇    下一篇

初次再结晶退火对模拟CSP含Cu Hi-B硅钢组织和织构的影响

黄明柱, 赵刚, 曹靖威, 胡致铃, 陈佳丽, 李海龙, 肖 欢   

  1. 武汉科技大学钢铁冶金及资源利用省部共建教育部重点实验室,武汉430081
  • 收稿日期:2016-03-07 出版日期:2016-08-01 发布日期:2022-08-06
  • 作者简介:黄明柱(I994-),男,本科生(武汉科技大学),Hi-B高磁感 取向硅钢初次再结晶织构研究。 ​
  • 基金资助:
    2012年国家自然科学基金项目(51274155),
    2015湖北省大学生创新创业训练计划项目(201510488020) 资助

Effect of Primary Recrystallization Annealing on Structure and Texture of Cu-Bearing Hi-B Silicon Steel Produced by Simulating CSP Process

Huang Mingzhu, Zhao Gang, Cao Jingwei, Hu Zhiquan, Chen Jiali, Li Hailong,  Xiao Huan   

  1. Key Laboratory for Ferrous Metallurgy and Resources Utilization of Ministry of Education, Wuhan University of Science and Technology, Wuhan 430081
  • Received:2016-03-07 Published:2016-08-01 Online:2022-08-06

摘要: 在实验室用模拟CSP工艺试制Hi-B高磁感取向硅钢薄板(/%:0.07C,3.02Si,0.13Mn,0.020P,0.006S,0.21Cu,0.025Cr,0.016A1,0.004Sn),该钢经25kg真空感应炉熔炼,铸成41 mm×120 mm板坯-热轧成2mm板-1 120℃常化-冷轧成0.27mm薄板。研究了830~870℃,3~7min退火对再结晶组织和织构的影响。结果表明,0.27mm含Cu Hi-B高磁感取向硅钢板的合适退火工艺为830℃ 5 min,其平均晶粒尺寸为15.6μm,不利织构{111}〈110〉和{001}〈110〉含量较低,有利织构{111}〈112〉分布合理,有利于在二次再结晶退火过程形成良好的高斯组织。

关键词: 含Cu Hi-B高磁感取向硅钢, 模拟CSP工艺, 初次再结晶退火, 组织, 织构

Abstract:  The sheet of Hi-B high magnetic induction oriented silicon steel (/% : 0. 07C, 3. 02Si, 0. 13Mn, 0. 020P, 0. 006S, 0. 21Cu, 0. 025Cr, 0. 016A1, 0. 004Sn) is produced by simulating CSP process in laboratory, the steel is melted by a 25 kg vacuum induction furnace, cast to 41 mm x 120 mm slab, hot-rolled to 2 mm plate, normalized at 1 120℃ and cold rolled to 0. 27 mm sheet. The effect of annealing at 830 ~ 870℃ for 3 ~ 7 min on recrystallized structure and texture of steel has been studied. Results show that the suitable annealing process for 0. 27 mm sheet of Cu-bearing Hi- B high magnetic induction oriented silicon steel is at 850℃ for 5 min, its average grain size is 15. 6 μm, the relative level of adverse texture [111] 〈110〉and {001}〈111〉 is lower and the distribution of favorable texture {111} 〈112〉is reasonable that is available to form favorable Goss texture in secondary recrystallization annealing process.