Effect of Temperature on Diffusion of Si in 1.6Si Non-Oriented Silicon Steel during Molten Salt Electro-Deposit Process

李慧; 梁精龙; 赵晓萍; 李运刚; 张芬萍

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Effect of Temperature on Diffusion of Si in 1.6Si Non-Oriented Silicon Steel during Molten Salt Electro-Deposit Process

更新时间：2026-01-21

- Effect of Temperature on Diffusion of Si in 1.6Si Non-Oriented Silicon Steel during Molten Salt Electro-Deposit Process
- Special Steel Vol. 35, Issue 6, Pages: 12-14(2014)
- 作者机构：
  
  1. 河北联合大学冶金与能源学院现代冶金技术教育部重点实验室,唐山,063009
  2. 河北工业职业技术学院,石家庄,050000
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：10 June 2014，
  
  Online First：19 August 2022，
  
  Published：19 August 2014
- 稿件说明：
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李慧, 梁精龙, 赵晓萍, et al. Effect of Temperature on Diffusion of Si in 1.6Si Non-Oriented Silicon Steel during Molten Salt Electro-Deposit Process[J]. Special Steel, 2014, 35(6): 12-14.
DOI：

李慧, 梁精龙, 赵晓萍, et al. Effect of Temperature on Diffusion of Si in 1.6Si Non-Oriented Silicon Steel during Molten Salt Electro-Deposit Process[J]. Special Steel, 2014, 35(6): 12-14. DOI：

摘要

试验了通过NaCl-KCl-NaF-SiO

熔盐在电流密度50 mA/cm

、电沉积脉冲电流正反向比9:1和750~850℃60min电沉积下阴极（/mm）20×20×0.5的1.6Si无取向冷轧硅钢片断面层硅的分布

并通过计算得出Si的扩散系数。结果表明

电沉积温度由750℃提高至850℃时

试样中Si含量增加

扩散的深度由18μm提高到40μm;电沉积温度与Si在钢中的扩散系数近似符合Arrhenius指数关系。

Abstract

The distribution of silicon at cross section of cathode (/mm) 20 X 20 X 0. 5 sheet of 1. 6Si non-oriented cold rolled silicon steel after electro-deposit treatment by NaCl-KCl-NaF-SiO

molten salt with current intensity 50 mA/ cm

electro-deposit pulse current positive-negative ratio 9：1 at 750 ~ 850 ℃ for 60min has been tested and the diffusion coefficient of Si is obtained by calculation. Results show that with increasing electro-deposit temperature from 750 ℃ to 850 ℃

the Si content in sample increases and the diffusion depth increases from 18 μm to 40 μm ； the relation between electrodeposit temperature and diffusion coefficient of Si in steel is similar to Arrhenius exponential relationship.

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