Abstract: The distribution of silicon at cross section of cathode (/mm) 20 X 20 X 0. 5 sheet of 1. 6Si non-oriented cold rolled silicon steel after electro-deposit treatment by NaCl-KCl-NaF-SiO₂ molten salt with current intensity 50 mA/ cm² , electro-deposit pulse current positive-negative ratio 9：1 at 750 ~ 850 ℃ for 60min has been tested and the diffusion coefficient of Si is obtained by calculation. Results show that with increasing electro-deposit temperature from 750 ℃ to 850 ℃, the Si content in sample increases and the diffusion depth increases from 18 μm to 40 μm ； the relation between electrodeposit temperature and diffusion coefficient of Si in steel is similar to Arrhenius exponential relationship.

摘要： 试验了通过NaCl-KCl-NaF-SiO₂熔盐在电流密度50 mA/cm²、电沉积脉冲电流正反向比9:1和750~850℃60min电沉积下阴极（/mm）20×20×0.5的1.6Si无取向冷轧硅钢片断面层硅的分布,并通过计算得出Si的扩散系数。结果表明,电沉积温度由750℃提高至850℃时,试样中Si含量增加,扩散的深度由18μm提高到40μm;电沉积温度与Si在钢中的扩散系数近似符合Arrhenius指数关系。

关键词: 无取向硅钢, 电沉积, 温度, 硅, 扩散系数